PTFA210601F V4

PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing 35 Efficiency -35 25 IM3 -40 20 -45 15 ACPR 5 33 35 37 39 41 Thermally-enhanced packages, Pb-free and RoHS-compliant • Broadband internal matching • Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 12 W - Linear Gain = 16 dB - Efficiency = 27.0% - Intermodulation distortion = –38 dBc - Adjacent channel power = –44 dBc • Typical CW performance, 2170 MHz, 28 V - Output power at P–1dB = 68 W - Efficiency = 58.5% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power 10 -55 31 • 30 Drain Efficiency (%) IM3 (dBc), ACPR (dBc) -25 -50 PTFA210601F Package H-37265-2 Features 2-Carrier WCDMA Drive-up -30 PTFA210601E Package H-36265-2 43 Average Output Power (dBm) RF Characteristics WCDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, POUT = 12 W average ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 15.0 16.0 — dB Drain Efficiency ηD 26.0 27.0 — % Intermodulation Distortion IMD — –38 –37 dBc All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 03, 2007-11-19 PTFA210601E PTFA210601F RF Characteristics (cont.) Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 16 — dB Drain Efficiency ηD — 42 — % Intermodulation Distortion IMD — –28 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA RDS(on) — 0.15 — Ω On-State Resistance VGS = 10 V, V DS = 0.1 V Operating Gate Voltage VDS = 28 V, IDQ = 550 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 196 W 1.12 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 60 W CW) RθJC 0.89 °C/W Ordering Information Type and Version Package Type Package Description Marking PTFA210601E V4 H-36265-2 Thermally-enhanced slotted flange, single-ended PTFA210601E PTFA210601F V4 H-37265-2 Thermally-enhanced earless flange, single-ended PTFA210601F *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 03, 2007-11-19 PTFA210601E PTFA210601F Broadband Performance 2-Tone Drive-up VDD = 28 V, IDQ = 550 mA, POUT = 41 dBm VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, tone spacing = 1 MHz 35 -10 Return Loss 30 -15 -20 Efficiency 20 -25 15 -30 Gain 10 -35 2070 2090 2110 2130 2150 2170 2190 2210 -30 -35 -40 35 IM5 IM3 30 -45 25 -50 20 -55 15 IM7 10 -60 5 -65 35 37 Frequency (MHz) 39 41 43 45 47 49 Output Power, PEP (dBm) Two-carrier WCDMA at Selected Biases Power Sweep, CW Conditions VDD = 28 V, f = 1960 MHz, 3GPP WCDMA signal, P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ VDD = 28 V, IDQ = 550 mA, f = 2170 MHz TCASE = 25°C 17 -30 65 TCASE = 90°C 450 mA 16 -35 650 mA -40 55 500 mA Gain (dB) 3rd Order IMD (dBc) 40 Efficiency -45 600 mA -50 Gain 15 45 14 35 13 550 mA 25 Efficiency 12 -55 31 33 35 37 39 41 15 0 43 10 20 30 40 50 60 70 Output Power (W) Output Power, PEP (dBm) Data Sheet Drain Efficiency (%) 25 45 -25 Drain Efficiency (%) -5 Intermodulation Distortion (dBc) 40 Input Return Loss (dB) Gain (dB), Efficiency (%) Typical Performance (data taken in a production test fixture) 3 of 10 Rev. 03, 2007-11-19 PTFA210601E PTFA210601F Typical Performance (cont.) Single-carrier WCDMA Drive-up IM3, Drain Efficiency and Gain vs. Supply Voltage IDQ = 550 m A, f = 2140 MHz, POUT (PEP) = 47.8 dBm , tone spacing = 1 MHz 30 Efficiency 25 -35 20 -40 -45 15 ACPR Up 10 -50 ACPR Low 3rd Order Intermodulation Distortion (dBc) -30 -10 32 34 36 38 40 42 50 -15 45 Efficiency -20 40 -25 35 IM3 Up -30 30 25 -35 20 Gain -40 15 -45 5 -55 55 10 23 44 24 Average Output Power (dBm) 25 26 27 28 29 30 31 32 33 Supply Voltage (V) Intermodulation Distortion Products vs. Tone Spacing Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, POUT = 47.8 dBm PEP 0.56 A Normalized Bias Voltage (V) Intermodulation Distortion (dBc) -20 3rd Order -25 -30 -35 5th -40 -45 -50 7th 5 10 15 20 25 30 35 40 1.11 A 1.02 1.67 A 2.22 A 1.01 2.78 A 1.00 3.33 A 3.89 A 0.99 4.44 A 0.98 5.00 A 0.97 0 20 40 60 80 100 Case Temperature (°C) Tone Spacing (MHz) Data Sheet 1.03 0.96 -20 -55 0 Gain (dB), Drain Efficiency (%) 35 -25 Drain Efficiency (%) Adjacent Channel Power Ratio (dB) VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, P/A R = 8.5 dB, 3.84 MHz BW 4 of 10 Rev. 03, 2007-11-19 PTFA210601E PTFA210601F R --> Broadband Circuit Impedance RD G E NE RA T O Z Source Ω Frequency Z Load Ω MHz R jX R jX 2070 10.29 –5.79 4.91 1.57 2110 9.46 –6.02 4.83 1.75 2140 8.79 –5.95 4.85 2.12 2170 8.14 –5.91 4.76 2.38 2210 7.19 –5.72 4.66 2.55 0.4 0.3 0.2 0.1 0.0 2070 MHz Z Source 2210 MHz 0.1 2070 MHz